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Scientists tend to get defect-free nanotubes structures by developing sophisticated technologies to achieve such goals. But Angel Rubio with staff from the University of Barcelona managed to use defects in boron nitride nanotubes with maximum benefit. The result of their research are patented light sources that can be easily incorporated into modern technologies of microelectronics.
Boron nitride is a promising material in the field of nanotechnology, due to its excellent insulating properties, high ohmic resistance and two-dimensional hexagonal structure similar to graphene structure. However light emission boron nitride nanotubes occurs in a very limited range ultraviolet, which means that they cannot used where radiation in a wider range is required frequencies and ease of control of this radiation.
The researchers showed that when an electric field is applied, perpendicular to the nanotube, you can make the latter emit light across the entire spectrum from infrared to far ultraviolet. At the same time, it is easy to control the radiation by changing magnitude of the applied electric field. This ease of management radiation of nanotubes is possible due to their cylindrical geometry (they are tubular structures with a length of the order of several micrometers and a diameter of the order of nanometers).
The device operates using natural (or induced) defects of boron nitride nanotubes. In particular, defects arise due to the absence of a boron atom in the wall of the nanotube, what is the most common defect when it manufacture. Paradoxically, it is these defects that make the system efficiently working, and, moreover, the more defects you have is, the better it functions.
Nanotubes from boron nitride are synthesized by standard methods. for the production of inorganic nanotubes. In the resulting structures there are natural defects, and you can get even more, just by irradiating nanotubes with high-energy rays.
The resulting device has a traditional configuration transistor, and easily integrates with modern technology production of electronic devices.
Unfortunately, boron nitride nanotubes are still being produced in very small quantities and, until now, does not exist economically sound methods for their synthesis on an industrial scale.
